Search results for "Indium Selenides"

showing 3 items of 3 documents

Photoconductivity and photovoltaic effect in indium selenide

1983

Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.

Materials sciencePhotoconductivityInorganic chemistryN−Type ConductorsGeneral Physics and Astronomychemistry.chemical_elementPhotovoltaic effectIndium CompoundsEfficiencyCrystalsBismuthPhotovoltaic EffectCharge Carrierschemistry.chemical_compoundP−Type ConductorsIndium Selenides ; Photoconductivity ; Photovoltaic Effect ; Experimental Data ; Crystals ; Doped Materials ; Mobility ; Lifetime ; Diffusion Length ; Charge Carriers ; Electrical Properties ; P−N Junctions ; P−Type Conductors ; N−Type Conductors ; Bismuth ; Platinum ; Indium Compounds ; Tin Oxides ; Efficiency:FÍSICA [UNESCO]SelenideDoped MaterialsPlatinumMobilityIndium Selenidesbusiness.industryPhotoconductivityElectrical PropertiesDopingP−N JunctionsUNESCO::FÍSICATin OxidesDiffusion LengthchemistryOptoelectronicsExperimental DataCharge carrierTinbusinessBismuthIndiumLifetime
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The application of the photoacoustic transmittance oscillations for determining elastic constants in gallium and indium selenides

1996

Transmittance periodic oscillations are observed in GaSe and InSe on excitation with optical pulses. Such oscillations are explained in terms of photoacoustic generation of dilatational waves, which become resonant within the crystal. Spectral analysis of those oscillations in samples of different thickness has led to an accurate determination of the longitudinal acoustic‐wave velocity along the crystallographic axis c. Julio.Pellicer@uv.es ; Chantal.Ferrer@uv.es ; Vicente.Munoz@uv.es

OscillationsGallium SelenidesGeneral Physics and Astronomychemistry.chemical_elementPhotoacoustic imaging in biomedicineMonocrystalsMolecular physicsResonanceCrystalOptics:FÍSICA [UNESCO]TransmittanceGallium Selenides ; Indium Selenides ; Monocrystals ; Oscillations ; Photoacoustic Effect ; Resonance ; Sound Velocity ; Sound WavesSound VelocityGalliumSound WavesPhotoacoustic effectPhotoacoustic EffectIndium Selenidesbusiness.industryUNESCO::FÍSICAResonancechemistrybusinessExcitationIndium
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High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

1993

A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…

Electron mobilityInfrared SpectraAnnealing (metallurgy)Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementAnnealingchemistry.chemical_compound:FÍSICA [UNESCO]Hall effectImpurityElectrical resistivity and conductivityTin AdditionsSelenideDoped MaterialsIndium SelenidesHall EffectCondensed matter physicsTemperature DependenceDopingUNESCO::FÍSICAElectric ConductivityIndium Selenides ; Tin Additions ; Impurities ; Annealing ; Electric Conductivity ; Infrared Spectra ; Hall Effect ; Deep Energy Levels ; Temperature Dependence ; Doped MaterialsDeep Energy LevelschemistryIndiumImpuritiesJournal of Applied Physics
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